BF1205C Datasheet PDF - NXP Semiconductors
| Part Number | BF1205C | |
| Description | Dual N-channel dual gate MOS-FET | |
| Manufacturers | NXP Semiconductors | |
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BF1205C
Dual N-channel dual gate MOS-FET
Rev. 01 — 18 May 2004
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio.
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment.
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
20
ID
(mA)
16
12
001aaa552
(1)
(2)
8
(4)
4
(6) (5)
(3)
0
012345
VGG (V)
(1) ID(b); RG1 = 120 kΩ.
(2) ID(b); RG1 = 150 kΩ.
(3) ID(b); RG1 = 180 kΩ.
(4) ID(a); RG1 = 180 kΩ.
(5) ID(a); RG1 = 150 kΩ.
(6) ID(a); RG1 = 120 kΩ.
Fig 2. Drain currents of MOS-FET a and b as function
of VGG.
g1 (a)
d (a)
g2 s
g1 (b)
RG1
VGG
d (b)
001aaa553
VGG = 5 V: amplifier a is off; amplifier b is on
VGG = 0 V: amplifier a is on; amplifier b is off.
Fig 3. Functional diagram.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier a
Table 8: Dynamic characteristics for amplifier a [1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
yfs
forward transfer admittance Tj = 25 °C
Cig1-ss input capacitance at gate 1 f = 1 MHz
Cig2-ss input capacitance at gate 2 f = 1 MHz
Coss output capacitance
f = 1 MHz
Crss reverse transfer capacitance f = 1 MHz
Gtr power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
NF noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
Min Typ Max Unit
26 31 41 mS
- 2.2 2.7 pF
- 3.0 - pF
- 0.9 - pF
- 20 - fF
31 35 39 dB
26 30 34 dB
21 25 29 dB
- 3.0 - dB
- 1.3 1.9 dB
- 1.4 2.1 dB
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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| Information | Total 22 Pages | |
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| Download | [ BF1205C.PDF Datasheet ] | |
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