BF1009S Datasheet PDF - Siemens Semiconductor Group
Part Number | BF1009S | |
Description | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | |
Manufacturers | Siemens Semiconductor Group | |
Logo | ||
There is a preview and BF1009S download ( pdf file ) link at the bottom of this page. Total 4 Pages |
Preview 1 page No Preview Available ! Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 9V
• Integrated bias network
BF 1009S
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1009S JLs
Q62702-F1628 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS ≤ 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
12
25
10
3
200
-55 ...+150
150
≤370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-29958-1-1919-081
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1009S electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BF1009S.PDF Datasheet ] |
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