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Número de pieza | BF1009 | |
Descripción | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF1009 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 9 V
• Integrated stabilized bias network
BF 1009
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1009 JKs Q62702-F1613 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS ≤ 76 °C0
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
12
25
10
3
200
-55 ...+150
150
≤370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BF1009.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
BF1005 | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
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