(PDF) BF1005S Datasheet - Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Número de pieza	BF1005S
Descripción	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network BF 1005S ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 1005S NZs Q62702-F1665 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS ≤ 76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering point Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Rthchs Value 8 25 10 3 200 - 55 ...+150 150 ≤370 Unit V mA V mW °C K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. SSeemmicioconndduuctcotor rGGrorouupp 11 Au 1-29958-1-1919-081 1 page

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PDF BF1005S Data sheet ( Hoja de datos )