(PDF) BGB540 Datasheet - A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

Número de pieza	BGB540
Descripción	A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
Fabricantes	Infineon Technologies AG
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No Preview Available ! Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes Never stop thinking. 1 page BGB540 Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, TS < 75°C1) Junction temperature Ambient temperature Storage temperature Thermal resistance: junction-soldering point Symbol VCE IC IBias VEB IB Ptot Tj TA TSTG Rth JS Notes: For detailed symbol description refer to figure 1. 1) TS is measured on the emitter lead at the soldering point to the PCB Value 4.5 80 8 1.2 0.7 250 150 -65 ... +150 -65 ... +150 300 Unit V mA mA V mA mW °C °C °C K/W IBias Bias,4 Bias IC C,3 VCE B,1 IB VEB E,2 Fig. 1: Symbol definition Data sheet 5 2002-09-11 5 Page

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PDF BGB540 Data sheet ( Hoja de datos )