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PDF BGA427 Data sheet ( Hoja de datos )
| Número de pieza | BGA427 | |
| Descripción | Si-MMIC-Amplifier in SIEGET 25-Technologie | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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BGA427
Si-MMIC-Amplifier in SIEGET 25-Technologie
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage VD = 2 V to 5 V
Reverse isolation 35 dB (Appl.2)
3
4
2
1 VPS05605
3 +V
Circuit Diagram
4 OUT
1
IN
2
GND
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
1, IN
Pin Configuration
Package
2, GND 3, +V 4, Out SOT343
EHA07378
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 120 °C
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
ID
VD,+V
Ptot
PRFin
Tj
TA
Tstg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
295
K/W
1 Aug-02-2001
1 page  
BGA427
Insertion power gain |S21|2 = f (f)
Noise figure NF = f (f)
VD, ID = parameter
35
dB
25
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
20
15
10
5
0
10
-1
10 0
GHz
10 1
f
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
25
VD,ID = parameter
5.0
dB
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-1
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
10 0
GHz
10 1
f
dBm
15
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
10
5
0
10
-1
10 0
GHz
10 1
f
5
Aug-02-2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BGA427.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| BGA420 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable) |  Siemens Semiconductor Group |
| BGA420 | Si-MMIC-Amplifier in SIEGET 25-Technologie | Infineon Technologies AG |
| BGA425 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) | Siemens Semiconductor Group |
| BGA427 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) | Siemens Semiconductor Group |
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