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PDF BG3123R Data sheet ( Hoja de datos )
| Número de pieza | BG3123R | |
| Descripción | DUAL N-Channel MOSFET Tetrode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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BG3123...
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Optimized for UHF (amp. B) and VHF (amp. A)
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
4
5
6
3
2
1
VPS05604
BG3123
65
B
A
12
4
3
BG3123R
65
B
A
12
4
3
AGC G2
HF G1
Input
RG1
VGG
Drain HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3123
BG3123R***
Package
SOT363
SOT363
Pin Configuration
1=G1* 2=G2 3=D* 4=D** 5=S
1=G1** 2=S 3=D** 4=D* 5=G2
Marking
6=G1** KOs
6=G1* KRs
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
±VG1/G2S
Ptot
Tstg
Tch
Value
8
25
20
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
1 Feb-27-2004
1 page  
BG3123...
Output characteristics ID = ƒ(VDS)
VG2S = 4V, VG1S = Parameter in V
amp. A
18
mA 1.5
14
1.4
12
10 1.3
8
1.2
6
4
2
00 2 4 6 8 10 V 14
VDS
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter in V
amp. A
120
µA
4
80 3.5
3
60
2.5
40
2
20
Output characteristics ID = ƒ(VDS)
VG2S = 4V, VG1S = Parameter in V
amp. B
18
mA
1.7
14 1.6
12 1.5
10
8
1.3
6
4
2 1.0
00 2 4 6 8 10 V 14
VDS
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter in V
amp. B
120
4
µA
3
80
2.5
60
40 2
20
00 0.4 0.8 1.2 V
2
VG1S
00 0.4 0.8 1.2 V
2
VG1S
5 Feb-27-2004
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BG3123R.PDF ] | |
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