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PDF BS170 Data sheet ( Hoja de datos )
| Número de pieza | BS170 | |
| Descripción | TMOS FET Switching(N-Channel-Enhancement) | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BS170 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BS170/D
TMOS FET Switching
N–Channel — Enhancement
BS170
1 DRAIN
2
GATE
®
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current(1)
Total Device Dissipation @ TA = 25°C
Operating and Storage Junction
Temperature Range
VDS
VGS
VGSM
ID
PD
TJ, Tstg
60
± 20
± 40
0.5
350
– 55 to +150
Vdc
Vdc
Vpk
Adc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
IGSS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
ON CHARACTERISTICS(2)
V(BR)DSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
ID(off)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
gfs
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Ciss
Turn–On Time
(ID = 0.2 Adc) See Figure 1
ton
Turn–Off Time
(ID = 0.2 Adc) See Figure 1
toff
v v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
—
60
0.8
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
Typ Max Unit
0.01 10 nAdc
90 — Vdc
2.0 3.0 Vdc
1.8 5.0
Ω
— 0.5 µA
200 — mmhos
— 60 pF
4.0 10 ns
4.0 10 ns
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BS170.PDF ] | |
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