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PDF BS107A Data sheet ( Hoja de datos )

Número de pieza BS107A
Descripción TMOS Switching(N-Channel-Enhancement)
Fabricantes Motorola Inc 
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No Preview Available ! BS107A Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BS107/D
TMOS Switching
N–Channel — Enhancement
1 DRAIN
2
GATE
®
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
VDS 200 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp 50 µs)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
mAdc
ID 250
IDM 500
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350 mW
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
V(BR)DSX
IGSS
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
Static Drain–Source On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
VGS(Th)
rDS(on)
Ciss
Crss
Coss
gfs
Turn–On Time
ton
Turn–Off Time
toff
v v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
200
1.0
200
BS107
BS107A
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
Typ Max Unit
— 30 nAdc
— — Vdc
0.01 10 nAdc
— 3.0 Vdc
Ohms
— 28
— 14
4.5 6.0
4.8 6.4
60 — pF
6.0 — pF
30 — pF
400 — mmhos
6.0 15 ns
12 15 ns
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

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