Datasheet BS107A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BS107A	N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct inter	NXP Semiconductors	transistor
2	BS107A	TMOS Switching(N-Channel-Enhancement) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont	Motorola Inc	data
3	BS107A	Small Signal MOSFET 250 mAmps BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Total Device D	ON Semiconductor	mosfet

BS1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BS1001-7R	100 Watt DC-DC Converters S Series 100 Watt DC-DC Converters Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage LGA • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with conve	Power-One	converter
2	BS100C	PHOTODIODE FOR VISIBLE LIGHT	Sharp Electrionic Components	diode
3	BS107	N-Channel Enhancement-Mode MOS Transistors Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 Features Benefits D Low OnĆResistance: 6 W D Secondary Br	TEMIC	transistor
4	BS107	TMOS Switching(N-Channel-Enhancement) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont	Motorola Inc	data
5	BS107	N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interf	NXP Semiconductors	transistor
6	BS107	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	Siemens Semiconductor Group	transistor
7	BS107	N-CHANNEL ENHANCEMENT MODE TRANSISTOR BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · ·	Diodes Incorporated	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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