|
|
PDF BT258X-800R Data sheet ( Hoja de datos )
| Número de pieza | BT258X-800R | |
| Descripción | Thyristors logic level | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BT258X-800R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Thyristors
logic level
Product specification
BT258X series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a full pack, plastic envelope,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT258X-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
555
888
75 75 75
V
A
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Ths ≤ 90 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
5
8
75
82
28
50
2
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000
1 page  
Philips Semiconductors
Thyristors
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
Product specification
BT258X series
1.0 (2x)
0.9
0.7
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 2002
5
Rev 2.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BT258X-800R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BT258X-800R | Thyristors logic level | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |