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PDF BSP316P Data sheet ( Hoja de datos )
| Número de pieza | BSP316P | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP316P (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
• Qualified according to AEC Q101
• Halogenfree according to IE C 61249221
BSP316P
Product Summary
VDS -100 V
RDS(on) 1.8 Ω
ID -0.68 A
PG-SOT223-4-1
Gate
pin1
Drain
pin 2/4
Source
pin 3
Type
Package
Tape and Reel Information Marking Packaging
BSP316P PG-SOT223-4-1 H6327: 1000 pcs/reel
BSP316P Non dry
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Value
-0.68
-0.54
-2.72
6
±20
1.8
-55... +150
55/150/56
Class 1a
Unit
A
kV/µs
V
W
°C
Rev. 2.0
Page 1
2016-05-30
1 page  
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C, -VGS
2.4
A 10V
5V
4.4V
2 3.6V
1.8
3.2V
2.8V
1.6 2.4V
2.2V
1.4
1.2
1
0.8
0.6
0.4
0.2
00 0.5 1 1.5 2 2.5 3 3.5 4 V 5
-VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
3.5
A
BSP316P
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj =25°C, -VGS
7
2.2V
2.4V
Ω 2.8V
3.2V
3.6V
5 4.4V
5V
10V
4
3
2
1
00 0.4 0.8 1.2 1.6 A 2.4
-ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj =25°C
1.8
S
2.5
1.2
2
0.9
1.5
0.6
1
0.5 0.3
00 0.5 1 1.5 2 2.5 3 3.5 V 4.5
-VGS
Rev.2.0
Page 5
00 0.4 0.8 1.2 1.6 2 2.4 A 3.2
-ID
2016-05-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP316P.PDF ] | |
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