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What is 1N4933G?

This electronic component, produced by the manufacturer "EIC discrete Semiconductors", performs the same function as "GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS".


1N4933G Datasheet PDF - EIC discrete Semiconductors

Part Number 1N4933G
Description GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
Manufacturers EIC discrete Semiconductors 
Logo EIC discrete Semiconductors Logo 


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1N4933G - 1N4937G
PRV : 50 - 600 Volts
Io : 1.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 50 °C
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT
VRRM 50 100 200 400 600 V
VRMS
35
70 140 280 420 V
VDC 50 100 200 400 600 V
IF(AV)
1.0
A
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
30
1.2
5.0
100
150
15
- 65 to + 150
- 65 to + 150
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002


Part Details

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1N4933G datasheet


1. Vrrm=50V, 1A, Fast Recovery Diode

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