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Datasheet BUZ90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUZ90 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 90
VDS
600 V
ID
4.5 A
RDS(on)
1.6 Ω
Package TO-220 AB
Ordering Code C67078-S1321-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A
ID |  Siemens Semiconductor Group | transistor |
| 2 | BUZ900 | (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET MAGNA
TEC
25.0
+0.1 -0.15
BUZ900 BUZ901
MECHANICAL DATA Dimensions in mm
N–CHANNEL POWER MOSFET
8.7 Max. 1.50 Typ. 11.60 ± 0.3
10.90 ± 0.1
POWER MOSFETS FOR AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED S |  Magna | mosfet |
| 3 | BUZ900 | Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3 |  New Jersey Semiconductor | mosfet |
| 4 | BUZ900DP | (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET MAGNA
TEC
20.0 5.0
BUZ900DP BUZ901DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0 1.0
• HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • |  ETC | mosfet |
| 5 | BUZ900P | N-CHANNEL POWER MOSFET MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ900P BUZ901P
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
3.55 (0.140) 3.81 (0.150)
4.50 (0.177) | Magna | mosfet |
BUZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H  STMicroelectronics mosfet | | |
| 2 | BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu Siemens Semiconductor Group transistor | | |
| 3 | BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor mosfet | | |
| 4 | BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Package TO-220 AB
Orde Siemens Semiconductor Group transistor | | |
| 5 | BUZ100L | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Pac Siemens Semiconductor Group transistor | | |
| 6 | BUZ100S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 77 A
RDS(on) 0.015 Ω
Package
Ordering Code
BUZ 100 S
TO-220 AB
Q67 Siemens Semiconductor Group transistor | | |
| 7 | BUZ100SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 70 A
RDS(on) 0.018 Ω
Package
Ordering Code
BUZ 100 Siemens Semiconductor Group transistor | |
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