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Número de pieza | BUT12AF | |
Descripción | Silicon diffused power transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUT12AF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
1 page Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
handbook, full pagewidth
102
IC
(A) ICM max
10 IC max
MGB935
II
1
10−1
I
10−2
10−3
DC
BUT12F
BUT12AF
10−4
1
10 102 103 VCE (V) 104
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
5 Page Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BUT12AF.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUT12A | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | Wing Shing Computer Components |
BUT12A | Silicon diffused power transistors | NXP Semiconductors |
BUT12A | High Voltage Power Switching Applications | Fairchild Semiconductor |
BUT12AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | Wing Shing Computer Components |
Número de pieza | Descripción | Fabricantes |
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