|
|
PDF BUT11APX Data sheet ( Hoja de datos )
| Número de pieza | BUT11APX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUT11APX (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
ICsat=2.5A,IB1=0.5A,IB2=0.8A
TYP.
-
-
-
-
-
-
-
3.5
145
MAX.
1000
1000
450
5
10
32
1.5
-
160
UNIT
V
V
V
A
A
W
V
A
ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
1000
5
10
2
4
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
September 1998
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11APX
Zth / (K/W)
10
BU1706AX
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
D=0
PD tp
tp
D= T
Tt
0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.13. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VCC
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.15. Test circuit RBSOA. Vcl ≤ 1000V; Vcc = 150V;
VBB = -5V; LB = 1µH; Lc = 200µH
IC/V
11
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800
VCE CLAMP/V
1,000
1,200
Fig.14. Reverse bias safe operating area. Tj ≤ Tj max
September 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUT11APX.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUT11APX | Silicon Diffused Power Transistor | NXP Semiconductors |
| BUT11APX-1200 | Silicon Diffused Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |