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What is BUL146?

This electronic component, produced by the manufacturer "Motorola Inc", performs the same function as "POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS".


BUL146 Datasheet PDF - Motorola Inc

Part Number BUL146
Description POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS
Manufacturers Motorola Inc 
Logo Motorola  Inc Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL146/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
BUL146*
BUL146F*
*Motorola Preferred Device
The BUL146/BUL146F have an applications specific state–of–the–art die designed
for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high voltage/high speed
transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125°C
Parametric Distributions are Tight and Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220
BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
POWER TRANSISTOR
6.0 AMPERES
700 VOLTS
40 and 100 WATTS
MAXIMUM RATINGS
Rating
Symbol BUL146 BUL146F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Rating
Symbol
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
RθJC
RθJA
TL
400
700
9.0
6.0
15
4.0
8.0
— 4500
— 3500
— 1500
100 40
0.8 0.32
– 65 to 150
BUL44 BUL44F
1.25 3.125
62.5 62.5
260
Vdc
Vdc
Vdc
Adc
Adc
V
Watts
W/°C
°C
Unit
°C/W
°C
BUL146
CASE 221A–06
TO–220AB
BUL146F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
ICES
— — 100 µAdc
— — 500
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
— — 100 µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

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BUL146 equivalent
130
120
110 IC = 3 A
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IC = 1.3 A
250
200
BUL146 BUL146F
IC = 1.3 A
100
IB(off) = IC/2
90 VCC = 15 V
VZ = 300 V
80 LC = 200 µH
70 TJ = 25°C
TJ = 125°C
60
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
150
100
IC = 3 A
IB(off) = IC/2
VCC = 15 V
TJ = 25°C
VZ = 300 V
50
TJ = 125°C
LC = 200 µH
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Cross–Over Time
100
DC (BUL146)
10 5 ms 1 ms
GUARANTEED SAFE OPERATING AREA INFORMATION
7
10 µs 1 µs
6
5
TC 125°C
IC/IB 4
LC = 500 µH
1
DC (BUL146F)
0.1
EXTENDED
SOA
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 15. Forward Bias Safe Operating Area
4
3
VBE(off)
2
–5V
1
0 0 V –1, 5 V
0 200 400 600 800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe Operating Area
1,0
0,8
SECOND BREAKDOWN
DERATING
0,6
0,4
THERMAL DERATING
0,2
0,0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second break-
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown in Figure 15
may be found at any case temperature by using the appropri-
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figure 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less than the limitations imposed by second breakdown.
For inductive loads, high voltage and current must be sus-
tained simultaneously during turn–off with the base–to–emit-
ter junction reverse–biased. The safe level is specified as a
reverse–biased safe operating area (Figure 16). This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data
5


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