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Datasheet K3362TV360 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K3362TV360 | Medium Voltage Thyristor
WESTCODE
An IXYS Company
Date:- 4 Aug, 2005 Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor Types K3362T#360 to K3362T#420
Development Type No.: KX091TC420
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-re |  IXYS | thyristor |
K33 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K330 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 2 | K3302 | Silicon N Channel MOS Type Field Effect Transistor 2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDS  Toshiba Semiconductor transistor | | |
| 3 | K3304 | N-Channel MOSFET, 2SK3304 TPS65170
www.ti.com SLVSA27 – OCTOBER 2009
LCD Bias Supply
Check for Samples :TPS65170
1
FEATURES
8.6V to 14.7V Input Voltage Range 2.8A Boost Converter Switch Current Limit Boost Converter Output Voltages up to 18.5V Boost and Buck Converter Short-Circuit Protection 1.5A Buck Converter Switch C  NEC data | | |
| 4 | K3306 | N-Channel MOSFET, 2SK3306
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F)
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switchi NEC data | | |
| 5 | K3310 | N-Channel MOSFET, 2SK3310 2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (V Toshiba Semiconductor data | | |
| 6 | K3313 | N-Channel MOSFET, 2SK3313 2SK3313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3313
Chopper Regulator, DC−DC Converter Applications Motor Drive Applications
l Fast reverse recovery time l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement− Toshiba Semiconductor data | | |
| 7 | K3314 | N-Channel MOSFET, 2SK3314
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Toshiba Semiconductor data | | |
| 8 | K3316 | N-Channel MOSFET, 2SK3316 www.DataSheet4U.net
2SK3316
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316
Switching Regulator Applications
z Fast reverse recovery time z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : trr = 60 ns (typ Toshiba Semiconductor data | | |
| 9 | K332 | N-Channel MOSFET, 2SK332 Sanyo Semicon Device data | |
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