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Datasheet K6R4008C1C-I Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K6R4008C1C-I | 512K x 8bit High Speed Static CMOS SRAM PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Versi | Samsung | ram |
K6R Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K6R1004C1C | High-Speed CMOS Static RAM
PRELIMINARY PRELIMINARY
CMOS SRAM
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete P Samsung semiconductor cmos | | |
2 | K6R1004C1D-JCI10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
for AT&T CMOS SRAM
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Cur Samsung semiconductor cmos | | |
3 | K6R1004C1D-JCI12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
for AT&T CMOS SRAM
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Cur Samsung semiconductor cmos | | |
4 | K6R1004V1D-JCI08 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
for AT&T CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete Samsung semiconductor cmos | | |
5 | K6R1004V1D-JCI10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
for AT&T CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete Samsung semiconductor cmos | | |
6 | K6R1008C1A- | 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data S Samsung semiconductor data | | |
7 | K6R1008C1A-C12 | 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data S Samsung semiconductor data | |
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