|
|
Datasheet BZX55C11 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX55C11 | Silicon Zener Diode, Rectifier BZX55C
SILICON PLANAR ZENER DIODES
The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. |  SEMTECH | diode |
| 2 | BZX55C11 | Small Signal Zener Diodes www.vishay.com
BZX55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
2.5; 5
VZ specification
Pulse current
Int. construction
Single
UNIT V mA
FEATURES • Very sharp reverse characteristic • Low |  Vishay | diode |
| 3 | BZX55C11 | 500mW ZENER DIODES ZENER DIODES
SENSITRON SEMICONDUCTOR
OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C
500mW ZENER DIODES / DO-35/DL-35 (MINI MELF)
TYPE
Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV |  SENSITRON | diode |
| 4 | BZX55C11 | Series Half Watt Zeners BZX55C 3V3 - BZX55C 33 Series
Discrete POWER & Signal Technologies
BZX55C 3V3 - 33 Series Half Watt Zeners
Absolute Maximum Ratings*
Parameter
Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above |  Fairchild Semiconductor | data |
| 5 | BZX55C11 | 500mW ZENER DIODE BZX55C2V4 - BZX55C75
500mW ZENER DIODE Features
· · · · Very Sharp Reverse Characteristic Low Reverse Current Level Very High Stability Low Noise
NOT RECOMMENDED FOR NEW DESIGNS USE 1N5221B - 1N5267B
A
B
A
C
D
Mechanical Data
· · · · Case: DO-35, Glass Terminals: Solderable per MIL-STD |  Diodes Incorporated | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
| Esta página es del resultado de búsqueda del BZX55C11. Si pulsa el resultado de búsqueda de BZX55C11 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |