|
|
Datasheet BZX55B56 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX55B56 | Silicon Zener Diode, Rectifier BZX55B
SILICON PLANAR ZENER DIODES
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-35 Dimensions in mm
Glass Case DO-34 Dimensi |  SEMTECH | diode |
| 2 | BZX55B56 | Zener Diode Small Signal Product
BZX55B2V4 thru BZX55B75
Taiwan Semiconductor
2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ± 2% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate |  Taiwan Semiconductor | diode |
| 3 | BZX55B56 | SILICON ZENER DIODES BZX55B2V0 ~ BZX55B100
VZ : 2.0 - 100 Volts PD : 500 mW
SILICON ZENER DIODES DO - 35
0.079(2.0 )max.
1.00 (25.4) min.
FEATURES :
* Complete 2.0 to 100 Volts
* High surge current capability
0.150 (3.8) max.
* High peak reverse power dissipation * High reliability * Low leakage current
0.020 (0. |  EIC | diode |
| 4 | BZX55B56 | Small Signal Zener Diodes www.vishay.com
BZX55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
2.5; 5
VZ specification
Pulse current
Int. construction
Single
UNIT V mA
FEATURES • Very sharp reverse characteristic • Low |  Vishay | diode |
| 5 | BZX55B56 | Silicon Epitaxial Planar Z-Diodes BZX55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D D
Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2%
Applications
Voltage stabilization
94 9367
Absolute Maximum Rating |  Vishay Telefunken | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
| Esta página es del resultado de búsqueda del BZX55B56. Si pulsa el resultado de búsqueda de BZX55B56 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |