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PDF 2SD601A Data sheet ( Hoja de datos )
| Número de pieza | 2SD601A | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD601A
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High forward current transfer ratio hFE
Low collector to emitter saturation voltage VCE(sat)
CLASSIFICATION OF hFE
Product-Rank 2SD601A-Q
Range
160~260
Marking Code
ZQ
2SD601A-R
210~340
ZR
2SD601A-S
290~460
ZS
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
7
100
200
150, -55~150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=10µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
V IC=2mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=10µA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 µA VCB=20V, IE=0
Emitter Cut-Off Current
IEBO - - 100 µA VEB=10V, IC=0
Collector to Emitter Saturation Voltage
VCE(sat)
-
- 0.3 V IC=100mA, IB=10mA
DC Current Gain
hFE (1)
160
-
460
hFE (2)
90
-
-
VCE=10V, IC=2mA
VCE=2V, IC=100mA
Transition Frequency
fT - 150 - MHz VCE=10V, IC=2mA, f=200MHz
Collector Output Capacitance
Cob - 3.5 - pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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