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What is 2SC3356?

This electronic component, produced by the manufacturer "Galaxy Microelectronics", performs the same function as "Silicon Epitaxial Planar Transistor".


2SC3356 Datasheet PDF - Galaxy Microelectronics

Part Number 2SC3356
Description Silicon Epitaxial Planar Transistor
Manufacturers Galaxy Microelectronics 
Logo Galaxy Microelectronics Logo 


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Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain.
NF=1.1dB TYP.,Ga=11dB TYP.
@VCE=10V,IC=7mA, f=1.0GHz
z High power gain. MAG=13dB TYP.
@VCE=10V,IC=20mA,f=1.0GHz.
Pb
Lead-free
2SC3356
APPLICATIONS
z Designed for low noise amplifier at VHF,UHF and CATV band.
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SC3356
R23/R24/R25
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
20
VCEO
Collector-Emitter Voltage
12
VEBO
Emitter-Base Voltage
3
IC Collector Current -Continuous
100
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mW
C142
Rev.A
www.gmicroelec.com
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC3356 electronic component.


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2SC3356 datasheet


1. 100mA, NPN Transistor - NEC

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