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Datasheet 2SA1621 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1621 | Silicon PNP transistor 2SA1621
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
放大倍数高,与 2SC4210 互补。 High hFE, complementary pair with 2SC4210.
用途 / Applications 用于音频功 |  BLUE ROCKET ELECTRONICS | transistor |
| 2 | 2SA1621 | SILICON PNP TRANSISTOR 2SA1621(3CG1621)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途：用于音频功率放大.
Purpose: Audio power amplifier application .
特点：放大倍数高,与 2SC4210(3DG4210)互补
Features: High hFE,complementary pair with 2SC4210(3DG4210).
极限参数/Absolute maximum ratings |  LZG | transistor |
| 3 | 2SA1621 | PNP Transistors SMD Type
Transistors
PNP Transistors 2SA1621
■ Features
● Collector Current Capability IC=-800mA ● Collector Emitter Voltage VCEO=-30V ● Complementary to 2SC4210
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.6 -0.1
0.55 0.4
Unit: mm 0.15 +0.0 |  Kexin | transistor |
| 4 | 2SA1621 | TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) 2SA1621
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1621
Audio Power Amplifier Applications
• High hFE: hFE = 100 to 320 • Complementary to 2SC4210
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitt |  Toshiba Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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