2N6520 Datasheet PDF - TRANSYS
Part Number | 2N6520 | |
Description | PNP Transistor | |
Manufacturers | TRANSYS | |
Logo | ||
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Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N6520 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM : -0.5
Collector-base voltage
A
V(BR)CBO : -350
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO*
Ic= -100 µA , IE=0
IC= -1 mA , IB=0
-350
-350
V(BR)EBO
IE= -10 µA, IC=0
-5
ICBO VCB= -250 V , IE=0
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
f
*
T
VEB= -4 V , IC=0
VCE=-10 V, IC= -1 mA
VCE=-10 V, IC= -10 mA
VCE=-10 V, IC= -30 mA
VCE=-10 V, IC= -50 mA
VCE=-10 V, IC= -100 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
VCE=-10V, IC= -100 mA
VCE=-20 V, IC= -10 mA
f =20 MHz
20
30
30
20
15
40
MAX
-0.05
-0.05
UNIT
V
V
V
µA
µA
200
200
-0.3
-0.35
-0.5
-1
-0.75
-0.85
-0.9
-2
V
V
V
200 MHz
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6520 electronic component. |
Information | Total 1 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 2N6520.PDF Datasheet ] |
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