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PDF 2N6517 Data sheet ( Hoja de datos )

Número de pieza 2N6517
Descripción NPN Plastic Encapsulated Transistor
Fabricantes SeCoS 
Logotipo SeCoS Logotipo



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No Preview Available ! 2N6517 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
2N6517
0.5 A, 350V
NPN Plastic Encapsulated Transistor
FEATURES
High Voltage Transistors
Complement of the 2N6520
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector


Base

Emitter
TO-92
GH
J
AD
B
K
E CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, Junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
350
350
6
500
0.625
200
150, -55~150
Unit
V
V
V
mA
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
350
-
- V IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
350
-
- V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
- V IE=0.01mA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.05
μA VCB=250V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.05
μA VEB=5V, IC=0
hFE (1)* 20 -
-
VCE=10V, IC=1mA
hFE (2)* 30 -
-
VCE=10V, IC=10mA
DC Current Gain
hFE (3)* 30 - 200
VCE=10V, IC=30mA
hFE (4)* 20 - 200
VCE=10V, IC=50mA
hFE (5)* 15 -
-
VCE=10V, IC=100mA
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
- 0.3 V IC=10mA, IB=1mA
- 1.0
IC=50mA, IB=5mA
- - 0.75
IC=10mA, IB=1mA
Base to Emitter Saturation Voltage
VBE(sat) *
-
- 0.85 V IC=20mA, IB=2mA
- - 0.9
IC=30mA, IB=3mA
Base to Emitter Voltage
VBE *
- - 2 V VCE=10V, IC=100mA
Collector to Base Capacitance
Cob - - 6 pF VCB=20V, IE=0A, f=1MHz
Transition Frequency
fT * 40 - 200 MHz VCE=20V, IC=10mA, f=20MHz
*Pulse testPulse Width300μ s, Duty Cycle2.0
http://www.SeCoSGmbH.com/
12-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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