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Datasheet 2N7002K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N7002K | N-Channel Enhanceent Mode Field Effect Transistor SMD Type
MOSFET
N-Channel Enhanceent Mode Field Effect Transistor 2N7002K
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Ma | Kexin | transistor |
2 | 2N7002K | N-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
VDS VDGR VGS ID IDM (1)
PTOT Rthj- amb
Parameter
Drain-source volt | HOTTECH | mosfet |
3 | 2N7002K | N-Channel MOSFET MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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Features
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1 • High density cell design for low RDS(ON)
• Voltage | MCC | mosfet |
4 | 2N7002K | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
*
Description:
* Gate Pretection Diode
SOURCE 2
The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for | WEITRON | mosfet |
5 | 2N7002K | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID max TA = +25°C
380mA
310mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power | Diodes Incorporated | mosfet |
2N7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T Unisonic Technologies mosfet | | |
2 | 2N70-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist Unisonic Technologies mosfet | | |
3 | 2N7000 | N-CHANNEL MOSFET 2N7000
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Applic BLUE ROCKET ELECTRONICS mosfet | | |
4 | 2N7000 | Small Signal MOSFET 2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
Gate-source Voltage Drain Current
Continuous Non-repetitive ( tp ≤ 50 � SEMTECH mosfet | | |
5 | 2N7000 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Vol KEC transistor | | |
6 | 2N7000 | Small Signal MOSFET WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
Features:
*Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE
1 SOURCE
2N7000
TO-92
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless WEITRON mosfet | | |
7 | 2N7000 | N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives.
D
SEATING PLANE
b1
TO-92
E S1
SeCoS mosfet | |
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