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PDF AO3400 Data sheet ( Hoja de datos )
| Número de pieza | AO3400 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | HOTTECH | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AO3400 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power
field effect transistor is produced using high cell density, DMOS
trench technology.
This high-density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage application
such as cellular phone and notebook computer power management
and other batter powered circuits where high side switching.
D
G
S
AO3400
N-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
30
20
5.8
4.9
30
1.4
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ Max
70 90
100 125
63 80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO3400.PDF ] | |
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