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Datasheet IRFS840 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRFS840 | N-Channel Power MOSFET, Transistor | Samsung | mosfet |
2 | IRFS840 | N-Channel MOSFET IRFS840(CS840F)
N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate c | LZG | mosfet |
3 | IRFS840 | N-CHANNEL MOSFET IRFS840(BRCS840F)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
� | BLUE ROCKET ELECTRONICS | mosfet |
4 | IRFS840A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS840A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power suppli | Inchange Semiconductor | mosfet |
5 | IRFS840A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.)
1
IRFS840A
BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 | Fairchild | mosfet |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
a D . w
ta
Sh
t e e
4U
.c
om
Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification. Vishay Intertechnology inductor | | |
2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi Vishay Siliconix inductor | | |
3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 Seme LAB mosfet | | |
7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
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