(PDF) IRF3710 Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	IRF3710
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	First Silicon
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. IRF3710 Absolute maximum ratings(Ta=25℃) Symbol VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS PD(Tc=25℃) TJ,TSTG RθJA Rating 100 59 42 240 ±20 15 170 160 -55 to 150 40 Unit V A A A V A mJ W ℃ ℃/W Electrical Characteristics(Ta=25℃) Symbol BVDSS IDSS IGSS VGS(th) RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf Test Conditions VGS=0V ID=250μA VDS=100V VGS=0V VDS=100V VGS=0V TJ=125℃ VGS=±20V VDS=0V VDS=VGS VGS=10V ID=250μA ID=35A VDS=50V VGS=0V ID=35A IS=35A TJ=25℃ VDS=25V VGS=0V f=1MHz VDD=50V ID=35A RG=6.8Ω Min 100 2.0 35 1.Gate 2.Drain 3.Source Typ 14 2900 290 150 17 77 41 56 Max 20 250 ±0.2 4.0 18 1.3 Unit V μA μA μA V mΩ S V pF ns 2015. 01. 10 Revision No : 0 1/2 1 page

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PDF IRF3710 Data sheet ( Hoja de datos )