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IRF540A Datasheet PDF - nELL

Part Number IRF540A
Description N-Channel Power MOSFET
Manufacturers nELL 
Logo nELL Logo 



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IRF540A datasheet, circuit
SEMICONDUCTOR
IRF540 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(28A, 100Volts)
DESCRIPTION
The Nell IRF540 are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors,UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
FEATURES
RDS(ON) = 0.077Ω @ VGS = 10V
Ultra low gate charge(72nC Max.)
Low reverse transfer capacitance
(CRSS = 120pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF540A)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
28
100
0.077 @ VGS = 10V
72
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage(Note 1)
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=28A, RGS=50Ω, VGS=10V
EAS
dv/dt
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
lAS=28A, L=440μH
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD ≤ 25V, L=440μH, lAS=28A, RG =25Ω, starting TJ =25°C
3.ISD ≤ 28A, di/dt ≤ 170A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
VALUE
UNIT
100
100 V
±20
28
20
A
110
28
15 mJ
230 mJ
5.5 V /ns
150
1.20
W
W /°C
-55 to 175
-55 to 175
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
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IRF540A equivalent
SEMICONDUCTOR
10
IRF540 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-²
10-₅
Single pulse
(Thermal response)
10-10-³ 10-²
PDM
t1
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
t2
0.1 1
Rectangular Pulse Duration , t1 (seconds)
10
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
VDS
L
RG
10V
tP
D.U.T.
lAS
0.01Ω
Vary tp to obtain required IAS
+
- VDD
A
BVDSS
lAS
VDD
www.nellsemi.com
Page 5 of 7
lD(t)
tp
VDS(t)
Time

5 Page
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Information Total 7 Pages
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