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PDF MBRD1040 Data sheet ( Hoja de datos )
| Número de pieza | MBRD1040 | |
| Descripción | 10A LOW VF SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Diodes | |
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MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Maximum Junction Temperature Rating
· Very Low Forward Voltage Drop
· Very Low Leakage Current
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: DPAK Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Marking Information: See Page 2
· Weight: 0.4 grams (approx.)
AE
P
4
B
123
G
H
J
M
DK
CL
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
DPAK
Dim Min Max
A 6.3 6.7
B ¾ 10
C 0.3 0.8
D 2.3 Nominal
E 2.1 2.5
G 0.4 0.6
H 1.2 1.6
J 5.3 5.7
K 0.5 Nominal
L 1.3 1.8
M 1.0 ¾
P 5.1 5.5
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Also see Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
RqJC
RqJA
Tj
TSTG
Value
40
28
10
100
6.0
80
-65 to +150
-65 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Symbol
V(BR)R
VFM
IRM
Cj
Min Typ Max Unit
Test Condition
40 ¾ ¾ V IR = 1mA
¾ 0.45 0.49
IF = 8A, TS = 25°C
¾ ¾ 0.41 V IF = 8A, TS = 125°C
¾ 0.47 0.51
IF = 10A, TS = 25°C
¾
¾
0.1
12.5
0.3
25
mA
TS = 25°C, VR = 35V
TS = 100°C, VR = 35V
¾ 700 ¾ pF f = 1.0MHz, VR = 4.0V DC
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30282 Rev. 3 - 2
1 of 3
www.diodes.com
MBRD1040
ã Diodes Incorporated
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