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PDF MBRF20200CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF20200CT | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | SANGDEST MICROELECTRONICS | |
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SANGDEST
MICROELECTRONICS
MBRF20200CT(CTR)
Technical Data
Green Products
Data Sheet N0131, Rev. B
MBRF20200CT(CTR) SCHOTTKY RECTIFIER
Applications:
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
Features:
• 150 °C T J operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
MBRF20200CT
MBRF20200CTR
Mechanical Dimensions: In mm
OPTION 1(CJ) OPTION 2(HD)
Dim Min Max Min Max
A 4.35 4.65 4.30 4.70
b 0.50 0.75 0.50 0.75
b1 1.15 1.402 1.20 1.45
b2 1.55 1.802 1.60 1.85
b3 1.55 1.65 1.50 1.75
b4 1.10 1.35 1.10 1.35
C 0.50 0.75 0.55 0.75
D 14.8 15.2 14.80 15.20
E 10.06 10.26 9.96 10.36
e 2.46 2.62 2.55TYP
F 2.85 3.15 2.80 3.20
G 6.50 6.90 6.50 6.90
L 12.70 13.70 12.70 13.70
L1 3.40 3.80 3.40 4.00
L2 2.60 3.00 -
-
Q 2.60 2.80 2.50 2.90
Q1 2.50 2.90 2.50 2.90
ØR 3.40 3.60 3.30 3.70
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
1 page  
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0131, Rev. B
MBRF20200CT(CTR)
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current at DC
condition (per leg)
Reverse Current (per leg) *
Junction Capacitance
(per leg)
Series Inductance(per leg)
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 10A, Pulse, TJ = 25 °C
@ 10A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.95
0.85
1.0
50
300
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/µs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature Range
Storage Temperature Range
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
-
RθJC DC operation
wt -
ITO-220AB
Specification
-55 to +150
-55 to +150
Units
°C
°C
4.5 °C/W
2g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MBRF20200CT.PDF ] | |
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