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PDF MBRF10200CT Data sheet ( Hoja de datos )

Número de pieza MBRF10200CT
Descripción SCHOTTKY BARRIER RECTIFIERS
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LITE-ON
SEMICONDUCTOR
MBRF10150CT thru 10200CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 to 200 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
ITO-220AB
B
K
PIN
1 23
G
I
HH
PIN 1
PIN 3
M
J
N
L
PIN 2
ITO-220AB
DIM. MIN. MAX.
A 15.50 16.50
B 10.0 10.40
C 3.00 3.50
D 9.00 9.30
E 2.90 3.60
F 13.46 14.22
G 1.15 1.70
H 2.40 2.70
I 0.75 1.00
J 0.45 0.70
K 3.00 3.30
L 4.36 4.77
M 2.48 2.80
N 2.50 2.80
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
MBRF10150CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
TC =135 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
@TJ=25 C
Voltage Rate of Change (Rated VR)
VRRM
VRMS
VDC
I(AV)
IFSM
IRRM
dv/dt
150
105
150
10
120
1
10000
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=5A @
IF=10A @
IF=10A @
TJ =25 C
TJ =125 C
TJ =25 C
TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
Typical Thermal Resistance (Note 2)
VF
IR
R0JC
0.92
0.75
1.00
0.85
8
2
5.0
Typical Junction Capacitance
per element (Note 3)
CJ
Operating Junction and Storage
Temperature Range
TJ,
TSTG
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
Vdis
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
120
-65 to +175
2000
MBRF10200CT
200
140
200
UNIT
V
V
V
A
A
A
V/us
V
uA
mA
C/W
pF
V
REV. 3, Oct-2010, KTHC38

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