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PDF 2N6676 Data sheet ( Hoja de datos )
| Número de pieza | 2N6676 | |
| Descripción | NPN High Power Silicon Transistor | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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2N6676 & 2N6678
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/538
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Test Conditions
Symbol Units Min.
IC = 200 mAdc, 2N6676
IC = 200 mAdc, 2N6678
V(BR)CEO Vdc
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676
VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678
ICEX µAdc
VEB = 7 Vdc
IEBO mAdc
VCB = 450 Vdc, 2N6676
VCB = 650 Vdc, 2N6678
ICBO mAdc
300
400
—
—
—
IC = 1 Adc, VCE = 3 Vdc
IC = 15 Adc, VCE = 3 Vdc
HFE -
15
8
Collector - Emitter Sustaining Voltage
IC = 15 Adc, IB = 3 Adc
VCE(SAT) Vdc
—
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 15 Adc, IB = 3 Adc
VBE(SAT) Vdc
—
IC = 1 Adc, VCE = 10 Vdc, f = 5 kHz
| HFE | -
3
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
150
Max.
—
1.0
2.0
1.0
40
20
1.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013439
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N6676.PDF ] | |
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