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What is 2N6678?

This electronic component, produced by the manufacturer "Central Semiconductor", performs the same function as "NPN SILICON POWER TRANSISTOR".


2N6678 Datasheet PDF - Central Semiconductor

Part Number 2N6678
Description NPN SILICON POWER TRANSISTOR
Manufacturers Central Semiconductor 
Logo Central Semiconductor Logo 


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2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6676
450
300
2N6677
550
350
8.0
15
20
5.0
175
-65 to +200
1.0
2N6678
650
400
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
VEB=8.0V
BVCEO
IC=200mA (2N6676)
300
BVCEO
IC=200mA (2N6677)
350
BVCEO
IC=200mA (2N6678)
400
VCE(SAT) IC=15A, IB=3.0A
VBE(SAT) IC=15A, IB=3.0A
hFE VCE=3.0V, IC=15A
8.0
Cob VCB=10V, IE=0, f=1.0MHz
ft VCE=10V, IC=1.0A, f=5.0MHz
3.0
td
tr
ts
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
tf
MAX
100
1.0
2.0
1.5
1.5
500
10
0.1
0.6
2.5
0.5
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
μs
R0 (26-July 2010)


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6678 electronic component.


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