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Datasheet 2N2297 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N2297AMPLIFIER TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T/\ = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v
Motorola Semiconductors
Motorola Semiconductors
transistor
22N2297Silicon Planar Epitaxial Transistor

ETC
ETC
transistor
32N2297SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 7.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 6.0 7.0 7.0 6.0 6.0 6.0 5.0 6.0 5.0 6.0 6.0 6.0 7.0 7.0 7.0 5.0 5.0 5.0 7.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 7.0 6.0 6.0
Central Semiconductor
Central Semiconductor
transistor
42N2297(2N2xxx) NPN General Purpose Medium Speed Amplifiers

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
Semicoa
Semicoa
amplifier
52N2297NPN SILICON TRANSISTOR

tPioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N2297 NPN SILICON TRANSISTOR TELEPHONE: (973) 376-2922 MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JEDEC TO-5 Lead 1 Emitter Lead 2 Base Lead 3 Collector (Electrically connected to case) ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS: C
New Jersey Semi-Conductor
New Jersey Semi-Conductor
transistor


2N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N20N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte
Inchange Semiconductor
Inchange Semiconductor
mosfet
22N2000(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
32N2001(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
42N2017Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A
Central Semiconductor
Central Semiconductor
transistor
52N2017Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
62N2018Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
72N2019Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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