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PDF MM3001 Data sheet ( Hoja de datos )
| Número de pieza | MM3001 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MM3000
thru
MM3003
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current
Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ Tc = 25°C
Derate above 25°C
Operating and Storage
Junction
Temperature Range
Symbol MM3000 MM3001 MM3002 MM3003 Unit
vCEO
100
150
200
250 Vdc
vEBO 5.0 Vdc
ic
200 200
50
50 mAdc
PD
Pd
TJ- Tstg
1.0
5.71
5.0
28.6
- 65 to + 200
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS <TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(O1)
dC = 10 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(JE = 10/uAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 50 Vdc, El = 0)
(Vcb = 75 Vdc, El = 0)
(VCB = 100 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 10 mAdc, Vqe = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 10 mAdc, Vce = 20 Vdc, f =
100 MHz)
Output Capacitance
(VC b = 20 Vdc, El
0, f = 100 kHz)
)
(1) Pulse Test: Pulse Width
uty Cycle =s 2.0%.
MM3000
MM3001
MM3002
MM3003
MM3000
MM3001
MM3002, MM3003
MM3000, MM3001
MM3002, MM3003
Symbol
v (BR)CEO
v(BR)EBO
^BO
Min
100
100
150
200
250
5.0
-
hFE
h
^obo
20
150
-
Max
Unit
Vdc
- Vdc
/xAdc
1.0
1.0
5.0
- MHz
PF
7.0
15
4-262
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MM3001.PDF ] | |
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