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PDF CV10814 Data sheet ( Hoja de datos )
| Número de pieza | CV10814 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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CV10814
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
"C
PD
Tj, T stg
Symbol
R&jc
R flJA
Value
40
40
5
100
300
2.0
-55 to +175
Max
200
500
Unit
Vdc
Vdc
Vdc
mAmp
mWatt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 2 mA, Ib = 0)
Collector Cutoff Current (Emitter Open)
(V C B = 30V, El = 0)
(VCB = 30 V, Ie = 0, Ta = 100°C)
Emitter Cutoff Current (Collector Open)
(VEB = 5 V, lc = 0)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC = 10 mA, Ib = 1 mA)
DC Current Gain
0C = 10 uA, V C E = 5 V)
PC = 2 mA, Vcf = 5 V)
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
dC = 10 mA, Vce = 5 V, f = 1 00 MHz)
Small Signal Current Gain
VdC = 1 mA, Vqe = 10 f = 1 kHz)
Noise Figure
(Rq = 2 KQ, V CE = 5 V, El = 200 uA, f
Output Capacitance
(VCB = 5 V, f = 1 MHz)
30 Hz to 15 kHz
Symbol
)[
Min
|
Max |
Unit ]
VCEO(sus
40
ICBO
100 nA
4 uA
lEBO
VCE(sat)
hFE
40
125
fT
200
100
Cobo
0.3
400
MHz
dB
pF
4-260
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CV10814.PDF ] | |
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