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BRX47 Datasheet PDF - Digitron Semiconductors

Part Number BRX47
Description SILICON CONTROLLED RECTIFIER
Manufacturers Digitron Semiconductors 
Logo Digitron Semiconductors Logo 



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BRX47 datasheet, circuit
BRX44-BRX49
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristics
Symbol
Value
Units
Peak repetitive forward and reverse blocking voltage(1)
(TJ = 25 to 125°C, RGK = 1000Ω)
BRX44
BRX45
BRX46
BRX47
BRX49
VDRM, VRRM
30
60 Volts
100
200
400
Forward current RMS (all conduction angles)
IT(RMS)
0.8 Amps
Peak forward surge current
(TA = 25°C, ½ cycle, sine wave, 60Hz)
ITSM 8 Amps
Circuit fusing considerations
(TA = 25°C, t = 8.3ms)
I2t 0.15 A2s
Forward peak gate power (TA = 25°C)
PGM 0.1 Watt
Forward peak gate current (TA = 25°C)
(300µs, 120 PPS)
IGM 1 Amps
Peak reverse gate voltage
VGRM
5 Volts
Operating junction temperature range @ rated VRRM and VDRM
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead solder temperature (<1.5mm from case, 10 sec. max.)
+230
°C
Thermal Resistance, junction to case
RθJC 75 °C/W
Thermal Resistance, junction to ambient
RθJA 200 °C/W
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(VD = rated VDRM @ TC = 125°C)
Peak reverse blocking current
(VR = rated VRRM @ TC = 125°C)
Forward “on” voltage(2)
(ITM = 1A peak @ TA = 25°C)
IDRM
IRRM
VTM
Gate trigger current (continuous dc)(3)
(Anode voltage = 7V, RL = 100Ω, TC = 25°C)
IGT
Min
-
-
-
-
Max
100
100
1.7
200
Units
µA
µA
Volts
µA
.
Rev. 20130128

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