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What is C1004?

This electronic component, produced by the manufacturer "IMP Inc", performs the same function as "Process C1004".


C1004 Datasheet PDF - IMP Inc

Part Number C1004
Description Process C1004
Manufacturers IMP Inc 
Logo IMP  Inc Logo 


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®
ISO 9001 Registered
Process C1004
CMOS 1.0µm
5 Volt Digital
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Electrical Characteristics
Symbol
VTN
γN
βN
LeffN
WN
BVDSSN
VTFP(N)
Minimum
0.55
74
0.60
7
10
Typical
0.75
0.60
87
0.75
0.8
T=25oC Unless otherwise noted
Maximum
0.95
100
0.90
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
LeffP
WP
BVDSSP
VTFP(P)
Minimum
–0.85
24
0.83
–7
–10
Typical
–1.0
0.4
28
0.98
0.85
Maximum
–1.15
32
1.13
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TFIELD
ρPOLY
ρM1
ρM2
TPASS
Minimum
0.8
20
60
15
Typical
1.0
35
0.45
80
0.5
20
700
22
50
30
200+900
Maximum
1.22
50
100
30
Unit
K/
/
µm
/
µm
nm
nm
/
m/
m/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
Cox
CM1P
CMIS
CMM
Minimum
1.52
Typical
1.64
0.046
0.028
0.038
Maximum
1.82
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
© IMP, Inc.
17


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for C1004 electronic component.


Information Total 2 Pages
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