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PDF 2N4341 Data sheet ( Hoja de datos )
| Número de pieza | 2N4341 | |
| Descripción | N-Channel JFET | |
| Fabricantes | Siliconix | |
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N-Channel JFETs
2N4338/4339/4340/4341
Product Summary
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
–50 0.6 0.6
–50 0.8 1.5
–50 1.3 3.6
–50 2 9
Features
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
Benefits
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
Applications
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
Description
The 2N4338/4339/4340/4341 n-channel JFETs are
designed for sensitive amplifier stages at low- to
mid-frequencies. Low cut-off voltages accommodate
low-level power supplies and low leakage for improved
system accuracy.
The TO-206AA (TO-18) package is hermetically sealed
and suitable for military processing (see Military
Information). For similar products in TO-226AA (TO-92)
and TO-236 (SOT-23) packages, see the J/SST201 series
data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 175_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70240.
Applications information may also be obtained via FaxBack, request document #70595 and #70599.
Siliconix
P-37408—Rev. D, 04-Jul-94
1
1 page  
2N4338/4339/4340/4341
Typical Characteristics (Cont’d)
Transfer Characteristics
500
VGS(off) = –0.7 V
VDS = 10 V
400
300 TA = –55_C
25_C
200
125_C
100
0
0
–0.1
–0.2 –0.3
–0.4 –0.5
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = –0.7 V
VDS = 10 V
f = 1 kHz
1.2
TA = –55_C
25_C
0.9
0.6
125_C
0.3
0
0 –0.1 –0.2 –0.3 –0.4 –0.5
VGS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
200
AV + 1
gfs RL
) RLgos
160 Assume VDD = 15 V, VDS = 5 V
120
RL
+
10 V
ID
Transfer Characteristics
2
VGS(off) = –1.5 V
VDS = 10 V
1.6
TA = –55_C
1.2 25_C
0.8
0.4 125_C
0
0 –0.4 –0.8 –1.2 –1.6 –2
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
3.2
2.4
TA = –55_C
25_C
1.6
0.8
0
0
125_C
–0.4 –0.8 –1.2 –1.6
VGS – Gate-Source Voltage (V)
–2
On-Resistance vs. Drain Current
2000
TA = 25_C
1600
1200
VGS(off) = –0.7 V
80
VGS(off) = –0.7 V
–1.5 V
40
0
0.01
0.1
ID – Drain Current (mA)
Siliconix
P-37408—Rev. D, 04-Jul-94
1
800
400
0
0.01
–1.5 V
0.1
ID – Drain Current (mA)
1
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N4341.PDF ] | |
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