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MUR1100E Datasheet PDF - Digitron Semiconductors

Part Number MUR1100E
Description 1 AMP ULTRA FAST RECTIFIER
Manufacturers Digitron Semiconductors 
Logo Digitron Semiconductors Logo 



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MUR1100E datasheet, circuit
MUR170E-MUR1100E
High-reliability discrete products
and engineering services since 1977
1 AMP ULTRA FAST RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (square wave)
Mounting method per note 2
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single phase,
60Hz)
Operating and storage junction temperature range
Maximum thermal resistance
Junction to ambient
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, Tstg
RӨJA
170E
700
MUR
180E
190E
800 900
1.0 @ TA = 95°C
35
-65 to +175
Note 1
1100E
1000
Unit
V
A
A
°C
°C/W
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Maximum instantaneous forward voltage (1)
(IF = 1.0A, TJ = 150°C)
(IF = 1.0A, TJ = 25°C)
Maximum instantaneous reverse current (1)
(Rated dc voltage, TJ = 100°C)
(Rated dc voltage, TJ = 25°C)
Maximum reverse recovery time
(IF = 1.0A, di/dt = 50A/µs)
(IF = 0.5A, IR = 1.0A, IREC = 0.25A)
Maximum forward recovery time
(IF = 1.0A, di/dt = 100A/µs, IREC to 1.0V)
Controlled avalanche energy
VF
IR
trr
tfr
WAVAL
170E
MUR
180E
190E
1.50
1.75
600
10
100
75
75
10
1100E
Unit
V
µA
ns
ns
mJ
Rev. 20150306

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