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Datasheet 1N5817 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5817 | Power Diodes - Schottky 1N5810 Series
Power Diodes - Schottky
1A Axial DO-41
Features:
• Low forward voltage drop . • High current capability. • High reliability. • High surge current capability.
Mechanical Data:
Cases Lead
Polarity High temperature soldering guaranteed
: Moulded plastic DO-41. : Axial leads, s |  Multicomp | diode |
| 2 | 1N5817 | SCHOTTKY RECTIFIERS 1N5817-1N5819
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and |  Digitron Semiconductors | rectifier |
| 3 | 1N5817 | SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20/ 30 and 40 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation |  MotorolaInc | rectifier |
| 4 | 1N5817 | 1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) 1N5817 THRU 1N5819
1 AMPERE SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere
FEATURES
! Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ! ! 1.0 ampere operation at TL=90 C with no thermal runaway |  Pan Jit International Inc. | rectifier |
| 5 | 1N5817 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 03
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Gu |  NXP Semiconductors | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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