Datasheet 1N5552 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	1N5552	STANDARD RECOVERY RECTIFIERS 1N5550-1N5554 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), stan	Digitron Semiconductors	rectifier
2	1N5552	STANDARD RECOVERY GLASS RECTIFIERS 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified to MIL-PRF-19500/420 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for	Microsemi	rectifier
3	1N5552	GLASS PASSIVATED SILICON RECTIFIERS 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general p	Central Semiconductor	rectifier
4	1N5552	GLASS PASSIVATED JUNCTION RECTIFIER 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts D * Forward Current - 3.0 Amperes FEATURES P A T E N T Case Style G4 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. ♦ Glass passivated cavity-free junction ♦ High temperature metal	General Semiconductor	rectifier
5	1N5552	Spice Model Spice Model 1N5552 Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifr	VMI	diode

1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	1N50	Diode, Rectifier	American Microsemiconductor	diode
2	1N50	GOLD BONDED GERMANIUM DIODES	New Jersey Semiconductor	diode
3	1N50	N-CHANNEL POWER MOSFET 1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re	Unisonic Technologies	mosfet
4	1N50-KW	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara	Unisonic Technologies	mosfet
5	1N500	Diode, Rectifier	American Microsemiconductor	diode
6	1N5000	Silicon Rectifiers	Microsemi Corporation	rectifier
7	1N5000	Diode Switching 400V 3A 2-Pin TOP HAT	New Jersey Semiconductor	diode

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Número de pieza	Descripción	Fabricantes	PDF
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