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What is MMBV105G?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "VOLTAGE VARIABLE CAPACITANCE DIODE".


MMBV105G Datasheet PDF - Motorola Semiconductors

Part Number MMBV105G
Description VOLTAGE VARIABLE CAPACITANCE DIODE
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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No Preview Available ! MMBV105G datasheet, circuit

.
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Symbol
VR
if
.
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R &JA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
30
200
Max
350
2.8
150
357
Unit
Vdc
mAdc
Unit
mW
mwrc
?C
°c/w
MMBV105G
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA/AB)
VOLTAGE VARIABLE
CAPACITANCE DIODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(Ir = 10 /*Adc)
Reverse Voltage Leakage Current
(V R = 28 Vdc)
Series Inductance
(f = 250 MHz)
Diode Capacitance Temperature Coefficient
(Vr = 3.0 Vdc, f = 1.0 MHz)
Diode Capacitance
(Vr = 25 Vdc)
Capacitance
(Vrt = 3.0 Vdc, Vr2 = 25 Vdc, f = 1.0 MHz)
V(BR)
30
Vdc
IR 50 nAdc
— —LS 3.0 nH
— —TCC
280 ppm/°C
cT 1.8
2.8 pF
C3/C25
4.0
6.0 pF
3-115


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MMBV105G electronic component.


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