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Datasheet BZX85 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX85 | SILICON PLANAR POWER ZENER DIODES BZX85 ...
SILICON PLANAR POWER ZENER DIODES
Features
Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request.
D | GOOD-ARK Electronics | diode |
2 | BZX85-C10 | Zener Diode, Rectifier BZX85-C3V6 THRU BZX85-C62
ZENER DIODES
DO-41 Glass
FEATURES
♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating.
max. .161 (4.1) min. 1.102 (28.0)
max. ∅ 0.102 (2.6)
Cathode Mark
♦ The Zener voltages are graded according to the inter | General Semiconductor | diode |
3 | BZX85-C11 | Zener Diode, Rectifier BZX85-C3V6 THRU BZX85-C62
ZENER DIODES
DO-41 Glass
FEATURES
♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating.
max. .161 (4.1) min. 1.102 (28.0)
max. ∅ 0.102 (2.6)
Cathode Mark
♦ The Zener voltages are graded according to the inter | General Semiconductor | diode |
4 | BZX85-C110 | SILICON PLANAR POWER ZENER DIODES BZX85 ...
SILICON PLANAR POWER ZENER DIODES
Features
Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request.
D | GOOD-ARK Electronics | diode |
5 | BZX85-C12 | Zener Diode, Rectifier BZX85-C3V6 THRU BZX85-C62
ZENER DIODES
DO-41 Glass
FEATURES
♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating.
max. .161 (4.1) min. 1.102 (28.0)
max. ∅ 0.102 (2.6)
Cathode Mark
♦ The Zener voltages are graded according to the inter | General Semiconductor | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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Número de pieza | Descripción | Fabricantes | |
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