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PDF MPSH34 Data sheet ( Hoja de datos )
| Número de pieza | MPSH34 | |
| Descripción | IF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"a = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCBO
vEBO
ic
PD
Tj. Tstg
Value
45
45
4.0
100
350
2.8
-55 to +135
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R 0JA
Max
357
Unit
T/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
C(I = 100 jiAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 10 AtAdc, cl = 0)
Collector Cutoff Current
(V C B = 30 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
C(l = 7.0 mAdc, V C E = 15 Vdc)
flC = 20 mAdc, Vqe = 2.0 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
Base-Emitter On Voltage
c|l = 7.0 mAdc, Vqe = 15 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(lC = 15 mAdc, Vce = 15 Vdc, f =
100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, El = 0, f = 1-0 MHz)
—Current-Gain Bandwidth Ratio
(lC = 15 mAdc to lc = 20 mAdc, Vce = 15 Vdc)
Symbol
V(BR)CEO
V(BR)CBO
v (BR)EBO
!CBO
hFE
VcE(sat)
v BE(on)
Ccb
^15
fT20
MPSH34
CASE 29-02, STYLE 2
TO-92 (TO-226AA)
IF TRANSISTOR
NPN SILICON
Refer to MPSH24 for graphs.
Typ
Unit
Vdc
Vdo
nAdc
Vdc
0.32
MHz
PF
2-245
1 page | ||
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| PDF Descargar | [ Datasheet MPSH34.PDF ] | |
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