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2N5457 Datasheet PDF - Motorola

Part Number 2N5457
Description JFET GENERAL PURPOSE
Manufacturers Motorola 
Logo Motorola Logo 

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2N5457 datasheet, circuit
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Ċ General Purpose
N–Channel — Depletion
3
GATE
1 DRAIN
2N5457
*Motorola Preferred Device
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
Drain – Gate Voltage
Reverse Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VDG
VGSR
IG
PD
25
25
– 25
10
310
2.82
Junction Temperature Range
TJ 125
Storage Channel Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Gate – Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate – Source Voltage
(VDS = 15 Vdc, ID = 100 mAdc)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current (1)
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
v v1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
VGS
IDSS
yfs
yos
Ciss
Crss
Min
– 25
– 0.5
1.0
1000
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Typ Max Unit
– 2.5
–1.0
– 200
– 6.0
Vdc
nAdc
Vdc
Vdc
3.0 5.0 mAdc
5000
mmhos
10 50 mmhos
4.5 7.0 pF
1.5 3.0 pF
Preferred devices are Motorola recommended choices for future use and best overall value.
4–110
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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