|
|
PDF 2N3439 Data sheet ( Hoja de datos )
| Número de pieza | 2N3439 | |
| Descripción | NPN HIGH VOLTAGE SILICON TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
|
1. 2N3439  Hay una vista previa y un enlace de descarga de 2N3439 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
2N3439
2N3440
TO-39
High Voltage Silicon Planar Transistors used in High Voltage &
High Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL 2N3439
Collector -Emitter Voltage
VCEO
350
Collector -Base Voltage
VCBO
450
Emitter -Base Voltage
VEBO
7.0
Collector Current Continuous
IC
1.0
Base Current
IB
0.5
Power Dissipation@ Ta=25 degC
PD
1.0
Derate Above 25 deg C
5.7
Power Dissipation@ Tc=25 degC
PD
5.0
Derate Above 25 deg C
28.6
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
175
Junction to Case
Rth(j-c)
35
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector -Emitter Voltage
VCEO(sus)*
IC=50mA,IB=0
Collector-Cut off Current
ICBO
VCB=360V, IE=0
VCB=250V, IE=0
ICEO
VCE=300V, IB=0
VCE=200V, IB=0
ICEX
VCE=450V,VBE=1.5V
VCE=300V,VBE=1.5V
Emitter-Cut off Current
IEBO
VEB=6V, IC=0
DC Current Gain
hFE*
IC=2mA,VCE=10V
IC=20mA,VCE=10V
Collector Emitter Saturation Voltage VCE(Sat)*
IC=50mA,IB=4mA
Base Emitter Saturation Voltage
VBE(Sat) *
IC=50mA,IB=4mA
2N3440
250
300
UNITS
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
2N3439
>350
<20
-
<20
-
<500
-
<20
>30
40-160
<0.5
<1.3
2N3440
>250
-
<20
-
<50
-
<500
<20
-
40-160
<0.5
<1.3
UNITS
V
uA
uA
uA
uA
uA
uA
uA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3439.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N343 | (2N339 - 2N343) N-P-N GROWN SILICON TRANSISTORS |  New Jersey Semi-Conductor |
| 2N343 | (2N342 / 2N343) N-P-N SILICON TRANSISTORS |  Transitron |
| 2N343 | Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |  New Jersey Semiconductor |
| 2N3436 | JFET LOW-FREQUENCY |  Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |